Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04CR
- RS 제품 번호:
- 216-9652
- 제조사 부품 번호:
- TSM033NB04CR
- 제조업체:
- Taiwan Semiconductor
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩48,128.00
일시적 품절
- 5,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 620 | ₩4,812.80 | ₩48,128.00 |
| 630 - 1240 | ₩4,692.48 | ₩46,924.80 |
| 1250 + | ₩4,621.04 | ₩46,202.88 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 216-9652
- 제조사 부품 번호:
- TSM033NB04CR
- 제조업체:
- Taiwan Semiconductor
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 121A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | |
| Length | 6mm | |
| Width | 3.81 mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 121A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | ||
Length 6mm | ||
Width 3.81 mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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