제조사부품번호

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04CR

RS 제품 번호:: 216-9648
제조사 부품 번호:: TSM025NB04CR
제조업체:: Taiwan Semiconductor

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04CR

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩61,006.00

단종되는 중

최종적인 1,660 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 620	₩6,100.60	₩61,011.64
630 - 1240	₩5,948.32	₩59,490.72
1250 +	₩5,856.20	₩58,569.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 216-9648
제조사 부품 번호:: TSM025NB04CR
제조업체:: Taiwan Semiconductor

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Taiwan Semiconductor
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	644A
	Maximum Drain Source Voltage Vds	40V
	Series	TSM025
	Package Type	PDFN56
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	107W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	77nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Length	6mm
	Standards/Approvals	IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC
	Height	1.1mm
	Width	3.81 mm
	Automotive Standard	No

	모두 선택
	브랜드 Taiwan Semiconductor
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 644A
	Maximum Drain Source Voltage Vds 40V
	Series TSM025
	Package Type PDFN56
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 107W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 77nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Length 6mm
	Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC
	Height 1.1mm
	Width 3.81 mm
	Automotive Standard No

Datasheet-TSM025NB04CR

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04CR

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