Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PDFN56 TSM110NB04DCR
- RS 제품 번호:
- 216-9683
- 제조사 부품 번호:
- TSM110NB04DCR
- 제조업체:
- Taiwan Semiconductor
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View bulk pricing optionsSubtotal (1 pack of 25 units)*
₩102,033.75
일시적 품절
- 2026년 6월 08일 부터 4,950 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 600 | ₩4,081.35 | ₩102,043.50 |
| 625 - 1225 | ₩3,979.95 | ₩99,489.00 |
| 1250 + | ₩3,917.55 | ₩97,948.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 216-9683
- 제조사 부품 번호:
- TSM110NB04DCR
- 제조업체:
- Taiwan Semiconductor
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 6.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 6.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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