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Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK

RS 제품 번호:: 215-2523
제조사 부품 번호:: IPL60R285P7AUMA1
제조업체:: Infineon

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK

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대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩4,489,440.00

일시적 품절

2026년 11월 16일 부터 배송

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수량	한팩당	릴당*
3000 - 12000	₩1,496.48	₩4,487,748.00
15000 +	₩1,466.40	₩4,398,072.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2523
제조사 부품 번호:: IPL60R285P7AUMA1
제조업체:: Infineon

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	ThinPAK
	Series	600V CoolMOS CFD7
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	285mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	59W
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Operating Temperature	150°C
	Length	8.1mm
	Standards/Approvals	No
	Width	1.1 mm
	Height	8.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type ThinPAK
	Series 600V CoolMOS CFD7
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 285mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 59W
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Operating Temperature 150°C
	Length 8.1mm
	Standards/Approvals No
	Width 1.1 mm
	Height 8.1mm
	Automotive Standard No

Datasheet - IPL60R285P7AUMA1

The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

Excellent ESD robustness >2kV(HBM) for all products

Significant reduction of switching and conduction losses

Wide portfolio in through hole and surface mount packages

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK

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