Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220
- RS 제품 번호:
- 215-2481
- 제조사 부품 번호:
- IPA65R125C7XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩176,156.00
재고있음
- 300 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩3,523.12 | ₩176,193.60 |
| 100 - 150 | ₩3,447.92 | ₩172,358.40 |
| 200 + | ₩3,370.84 | ₩168,523.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2481
- 제조사 부품 번호:
- IPA65R125C7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 32W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 32W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineons Cool MOS™ C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
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