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Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1

RS 제품 번호:: 215-2469
제조사 부품 번호:: BSR315PH6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 50 units)*

₩24,722.00

재고있음

추가로 2025년 12월 29일 부터 2,000 개 단위 배송

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수량	한팩당	한팩당*
50 - 700	₩494.44	₩24,740.80
750 - 1450	₩483.16	₩24,120.40
1500 +	₩475.64	₩23,744.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2469
제조사 부품 번호:: BSR315PH6327XTSA1
제조업체:: Infineon

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	620mA
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SC-59
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Power Dissipation Pd	0.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 620mA
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SC-59
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Power Dissipation Pd 0.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSR315PH6327XTSA1

The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Pb-free lead-plating

Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1

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