Infineon OptiMOS Type N-Channel MOSFET, 98 A, 40 V Enhancement, 8-Pin SuperSO BSC032N04LSATMA1

RS 제품 번호:: 215-2457
제조사 부품 번호:: BSC032N04LSATMA1
제조업체:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 98 A, 40 V Enhancement, 8-Pin SuperSO BSC032N04LSATMA1

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Subtotal (1 pack of 20 units)*

₩34,560.00

7,740 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 1240	₩1,728.00	₩34,580.00
1260 - 2480	₩1,686.00	₩33,720.00
2500 +	₩1,662.00	₩33,240.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2457
제조사 부품 번호:: BSC032N04LSATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	98A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	SuperSO
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	52W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 98A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type SuperSO
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 52W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC032N04LSATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 98A Maximum Continuous Drain Current - BSC032N04LSATMA1

This MOSFET is a high-current N-channel transistor designed for surface-mounted power switching and conversion in demanding electronic systems. It operates across a wide ambient range and suits applications requiring low conduction losses and significant continuous current handling within a compact SuperSO package.

Features and Benefits:

• Very low on-resistance of 4.4 mΩ for reduced conduction losses
• 98A continuous drain capability for heavy-current loads
• 40V drain-to-source rating for mid-voltage power stages
• 52W maximum power dissipation for thermal headroom
• Typical gate charge 25 nC enabling efficient gate drive
• Operates from -55 °C to 175 °C for extended temperature tolerance

Applications

• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in power management
• Used for motor-drive stages requiring surface-mount parts
• Can be used for telecom and server power distribution
• Suited to battery-powered systems needing low Vf switching

What gate-drive considerations are required for efficient switching?

Drive circuitry should deliver sufficient peak current to charge the 25 nC gate rapidly while controlling switching slew to balance switching loss and EMI.

How should thermal management be approached on the PCB?

Use multi-layer copper planes and thermal vias beneath the SuperSO footprint to spread 52W dissipation and lower junction-to-board thermal resistance.

What electrical stresses must the device withstand during transient events?

The device is rated to 40V Vds steady-state

transient protection such as snubbers or transient voltage suppression should be applied to limit voltage overshoot beyond this level.

Are there specific layout practices for minimising conduction loss?

Place wide, short copper traces for drain and source connections and minimise loop inductance between the device and its gate drive to preserve the low 4.4 mΩ advantage.