Infineon HEXFET N-Channel MOSFET, 68 A, 60 V Enhancement, 9-Pin DirectFET AUIRF7648M2TR
- RS 제품 번호:
- 215-2450
- 제조사 부품 번호:
- AUIRF7648M2TR
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩34,100.00
마지막 RS 재고
- 최종적인 10 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 1195 | ₩6,820.00 | ₩34,100.00 |
| 1200 - 2395 | ₩6,656.00 | ₩33,280.00 |
| 2400 + | ₩6,548.00 | ₩32,740.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2450
- 제조사 부품 번호:
- AUIRF7648M2TR
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a DirectFET M4 package. The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
Low Rds(on) for Improved Efficiency
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
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