Infineon HEXFET N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR
- RS 제품 번호:
- 214-8949
- 제조사 부품 번호:
- AUIRF7675M2TR
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 4800 units)*
₩13,305,600.00
재고있음
- 추가로 2026년 10월 26일 부터 4,800 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 4800 - 4800 | ₩2,772.00 | ₩13,301,760.00 |
| 9600 - 14400 | ₩2,688.00 | ₩12,902,400.00 |
| 19200 + | ₩2,608.00 | ₩12,515,520.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-8949
- 제조사 부품 번호:
- AUIRF7675M2TR
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.05mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Height | 740μm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5.05mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Height 740μm | ||
Automotive Standard AEC-Q101 | ||
The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Advanced Process Technology
175°C Operating Temperature
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