제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR

RS 제품 번호:: 214-8950
제조사 부품 번호:: AUIRF7675M2TR
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩28,030.80

재고있음

4,800 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 1190	₩2,803.08	₩28,030.80
1200 - 2390	₩2,733.52	₩27,335.20
2400 +	₩2,690.28	₩26,902.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-8950
제조사 부품 번호:: AUIRF7675M2TR
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	DirectFET
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	45W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.35mm
	Height	0.74mm
	Width	5.05 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type DirectFET
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 45W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.35mm
	Height 0.74mm
	Width 5.05 mm
	Automotive Standard AEC-Q101

Datasheet - AUIRF7675M2TR

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.

Advanced Process Technology

175°C Operating Temperature

Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR

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