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Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL

RS 제품 번호:: 214-8963
제조사 부품 번호:: AUIRFSA8409-7TRL
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩51,944.40

재고있음

2,360 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 195	₩10,388.88	₩51,944.40
200 - 395	₩10,129.44	₩50,647.20
400 +	₩9,971.52	₩49,857.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-8963
제조사 부품 번호:: AUIRFSA8409-7TRL
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	523A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	0.69mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	375W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	305nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.65 mm
	Height	4.83mm
	Length	10.54mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 523A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 0.69mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 375W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 305nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.65 mm
	Height 4.83mm
	Length 10.54mm
	Automotive Standard AEC-Q101

Datasheet - AUIRFSA8409-7TRL

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

Automotive Qualified

Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL

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