Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL

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Subtotal (1 pack of 5 units)*

₩62,614.50

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5 - 195₩12,522.90₩62,614.50
200 - 395₩12,210.90₩61,054.50
400 +₩12,019.80₩60,099.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
214-8963
제조사 부품 번호:
AUIRFSA8409-7TRL
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

523A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.69mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

305nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.54mm

Height

4.83mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

Automotive Qualified

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