Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263
- RS Stock No.:
- 214-8962
- Mfr. Part No.:
- AUIRFSA8409-7TRL
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 800 units)*
₩4,578,176.00
재고있음
- 추가로 2026년 2월 09일 부터 1,600 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | ₩5,722.72 | ₩4,578,326.40 |
| 4000 + | ₩5,608.04 | ₩4,486,732.80 |
*price indicative
- RS Stock No.:
- 214-8962
- Mfr. Part No.:
- AUIRFSA8409-7TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 523A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.69mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 523A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.69mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Automotive Qualified
Related links
- Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263 AUIRFS8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263 AUIRFS4115-7TRL
- Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 6-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin TO-263