Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN

RS 제품 번호:: 214-4344
제조사 부품 번호:: BSZ110N08NS5ATMA1
제조업체:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 5000 units)*

₩3,620,000.00

일시적 품절

2027년 8월 27일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
5000 - 20000	₩724.00	₩3,620,000.00
25000 +	₩710.00	₩3,547,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-4344
제조사 부품 번호:: BSZ110N08NS5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	50W
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	No
	Length	3.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 50W
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals No
	Length 3.4mm
	Automotive Standard No

Datasheet - BSZ110N08NS5ATMA1

Infineon OptiMOS 5 Series MOSFET, 80V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ110N08NS5ATMA1

This MOSFET is a high-power N-channel semiconductor device designed for surface-mounted power switching and conversion in demanding environments. It operates across a wide temperature span suited to industrial tasks and delivers robust current handling with low voltage drop to support efficient power stages and compact thermal designs.

Features and Benefits:

• 80V drain voltage enables high-voltage switching applications
• 11mΩ low Rds(on) reduces conduction losses at high currents
• 40A continuous drain current supports heavy-load operation
• 15nC typical gate charge for fast, efficient gate switching
• 50W power dissipation allows significant heat handling
• 1.2V forward voltage minimises diode conduction losses

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for high-current motor-drive stages
• Used with DC-DC conversion modules in telecoms equipment
• Can be used for battery management and charging systems
• Appropriate for high-power LED driver circuitry

What mounting format is required for board assembly?

It is supplied in a PQFN package intended for surface-mount placement requiring a flat PCB land pattern and thermal vias for heat transfer.

How does the device handle thermal extremes during operation?

It is rated to operate from -55°C up to 150°C junction temperatures, permitting use in harsh industrial temperature profiles.

What gate-drive considerations are recommended?

The maximum gate-to-source rating is 20V and the typical total gate charge is 15nC, so a drive capable of rapid charge/discharge with appropriate slew control is advised.

Which conduction characteristic affects PCB thermal design?

Its low drain-source resistance of 11mΩ dictates lower I²R losses, shifting emphasis to managing switching and package thermal dissipation pathways.