Infineon OptiMOS Type N-Channel MOSFET, 40 A, 40 V N, 8-Pin PQFN

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RS 제품 번호:
214-4338
제조사 부품 번호:
BSZ034N04LSATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

N

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ034N04LSATMA1


This MOSFET is a surface-mount N-channel switching transistor designed for power conversion and high-current applications. It operates across a wide temperature span and is intended for compact, board-mounted designs where low conduction loss and fast switching are required.

Features and Benefits:


• Very low on-resistance 4.6mΩ reduces conduction losses
• High continuous drain current 40A supports heavy loads
• 40V drain-source rating enables mid-voltage power stages
• Typical gate charge 25nC yields faster switching response
• Power dissipation 52W permits substantial heat handling
• Gate-source limit 20V protects against excessive drive voltages

Applications


• Suitable for DC-DC converter switching stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge circuits
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load modules

What mounting approach does it require on a board?


It is supplied in a PQFN surface-mount package designed for soldered PCB attachment and thermal conduction through the package land pattern.

How does its thermal range affect deployment?


Rated from -55 to 150°C it can be placed in environments with extreme ambient and elevated junction temperatures, subject to appropriate thermal design.

What gate drive considerations apply for switching performance?


With a typical gate charge of 25nC, designers should provide sufficient gate-drive current to achieve targeted transition speeds while managing EMI.

Is it configured for enhancement-mode operation?


The device uses an N-channel conduction mode suitable for low-side and high-side configurations when paired with appropriate gate drive and level shifting.

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