STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 212-2105P
- 제조사 부품 번호:
- STD11N60M6
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal 630 units (supplied on a reel)*
₩1,170,760.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 630 - 1240 | ₩1,858.35 |
| 1250 + | ₩1,829.10 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 212-2105P
- 제조사 부품 번호:
- STD11N60M6
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STD11N60M6 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STD11N60M6 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
MDMesh M6 MOSFET N-CH
The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected