제조사부품번호

Vishay SQJQ148E N-Channel MOSFET, 375 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3

RS 제품 번호:: 210-5060P
제조사 부품 번호:: SQJQ148E-T1_GE3
제조업체:: Vishay

Vishay SQJQ148E N-Channel MOSFET, 375 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3

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RS 제품 번호:: 210-5060P
제조사 부품 번호:: SQJQ148E-T1_GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	375A
	Maximum Drain Source Voltage Vds	40V
	Series	SQJQ148E
	Package Type	PowerPAK (8x8L)
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	69nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	325W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Height	1.7mm
	Standards/Approvals	No
	Length	8mm
	Width	8.1mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 375A
	Maximum Drain Source Voltage Vds 40V
	Series SQJQ148E
	Package Type PowerPAK (8x8L)
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 69nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 325W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Height 1.7mm
	Standards/Approvals No
	Length 8mm
	Width 8.1mm
	Automotive Standard AEC-Q101

Datasheet - SQJQ148E-T1_GE3

The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK 8 x 8L package type with 375 A drain current.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.6 mm package

Very low thermal resistance

Vishay SQJQ148E N-Channel MOSFET, 375 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3

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