Vishay Dual SiSF06DN 2 N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3

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RS 제품 번호:
204-7259
제조사 부품 번호:
SISF06DN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

101A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSF06DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

69.4W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Height

0.73mm

Width

3.3mm

Standards/Approvals

No

Length

3.3mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.

Very low source-to-source on resistance

TrenchFET Gen IV power MOSFET

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