onsemi NVH Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 202-5746
- 제조사 부품 번호:
- NVHL160N120SC1
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 450 units)*
₩4,941,486.00
마지막 RS 재고
- 최종적인 450 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 450 - 450 | ₩10,981.08 | ₩4,941,486.00 |
| 900 - 1350 | ₩10,761.12 | ₩4,842,673.20 |
| 1800 + | ₩10,546.80 | ₩4,745,806.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5746
- 제조사 부품 번호:
- NVHL160N120SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 119W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Height | 20.25mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 119W | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Height 20.25mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 160 mΩ, TO247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% UIL Tested
Low effective output capacitance
RoHS compliant
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