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onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L160N120SC1

RS Stock No.:: 202-5743
Mfr. Part No.:: NVH4L160N120SC1
Brand:: onsemi

onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L160N120SC1

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Subtotal (1 pack of 5 units)*

₩57,678.40

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2026년 4월 16일 부터 배송

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Units	Per unit	Per Pack*
5 - 110	₩11,535.68	₩57,678.40
115 - 220	₩11,306.32	₩56,531.60
225 +	₩11,076.96	₩55,384.80

*price indicative

RS Stock No.:: 202-5743
Mfr. Part No.:: NVH4L160N120SC1
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	17.3A
	Maximum Drain Source Voltage Vds	1200V
	Series	NVH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	160mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	111W
	Typical Gate Charge Qg @ Vgs	34nC
	Forward Voltage Vf	4V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101 and PPAP Capable
	Length	15.8mm
	Height	22.74mm
	Width	5.2 mm
	Automotive Standard	AEC-Q101

	Select all
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 17.3A
	Maximum Drain Source Voltage Vds 1200V
	Series NVH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 160mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 111W
	Typical Gate Charge Qg @ Vgs 34nC
	Forward Voltage Vf 4V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101 and PPAP Capable
	Length 15.8mm
	Height 22.74mm
	Width 5.2 mm
	Automotive Standard AEC-Q101

Datasheet - NVH4L160N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

100% avalanche tested

Low effective output capacitance

RoHS compliant

onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L160N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

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