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onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1

RS Stock No.:: 202-5738
Mfr. Part No.:: NVH4L040N120SC1
Brand:: onsemi

onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1

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Bulk discount available

Subtotal (1 pack of 2 units)*

₩56,682.00

재고있음

394 개 단위 배송 준비 완료

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Units	Per unit	Per Pack*
2 - 112	₩28,341.00	₩56,682.00
114 - 224	₩27,626.60	₩55,253.20
226 +	₩27,081.40	₩54,162.80

*price indicative

RS Stock No.:: 202-5738
Mfr. Part No.:: NVH4L040N120SC1
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NVH
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	106nC
	Minimum Operating Temperature	-50°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	319W
	Maximum Operating Temperature	170°C
	Length	15.8mm
	Width	5.2 mm
	Height	22.74mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NVH
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 106nC
	Minimum Operating Temperature -50°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 319W
	Maximum Operating Temperature 170°C
	Length 15.8mm
	Width 5.2 mm
	Height 22.74mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - NVH4L040N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L

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