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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	TO-263
	Series	NVB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	106nC
	Maximum Power Dissipation Pd	178W
	Maximum Operating Temperature	150°C
	Length	10.2mm
	Width	4.7mm
	Height	15.7mm
	Standards/Approvals	AEC-Q101
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type TO-263
	Series NVB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 106nC
	Maximum Power Dissipation Pd 178W
	Maximum Operating Temperature 150°C
	Length 10.2mm
	Width 4.7mm
	Height 15.7mm
	Standards/Approvals AEC-Q101
	Automotive Standard No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

onsemi NVB N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin TO-263

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L

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