onsemi N-Channel MOSFET, 98 A, 1.2 kV Enhancement, 7-Pin TO-263 NVBG020N120SC1
- RS 제품 번호:
- 195-8970P
- 제조사 부품 번호:
- NVBG020N120SC1
- 제조업체:
- onsemi
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현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 195-8970P
- 제조사 부품 번호:
- NVBG020N120SC1
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 98 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance (Rds) | 0.028 Ω | |
| Mount Type | Surface | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 98 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance (Rds) 0.028 Ω | ||
Mount Type Surface | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L
The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and Compact chip size ensure low capacitance and gate charge. It include highest efficiency, Faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge (typ. QG(tot) = 220nC)
Low effective output capacitance
100% avalanche tested
Qualified according to AEC−Q101
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