SiC N-Channel MOSFET, 98 A, 1200 V, 7-Pin D2PAK onsemi NVBG020N120SC1

The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. It include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Ultra low gate charge (typ. QG(tot) = 220nC)
Low effective output capacitance
100% avalanche tested
Qualified according to AEC−Q101

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