제조사부품번호

onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLT1G

RS 재고 번호:: 195-2669
제조 부품 번호:: NVMFD6H840NLT1G
제조업체:: onsemi

onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLT1G

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대량 구매 할인 기용 가능

Subtotal (1 pack of 15 units)*

₩49,773.00

마지막 RS 재고

최종적인 2,985 개 unit(s)이 배송 준비 됨

단위당	한팩당	한팩당*
15 - 360	₩3,318.20	₩49,782.40
375 - 735	₩3,235.48	₩48,541.60
750 +	₩3,186.60	₩47,808.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 재고 번호:: 195-2669
제조 부품 번호:: NVMFD6H840NLT1G
제조업체:: onsemi

기술적 참조

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	80V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	175°C
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Power Dissipation Pd	3.1W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Height	1.05mm
	Width	5.1 mm
	Length	6.1mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 80V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 175°C
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Power Dissipation Pd 3.1W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature -55°C
	Transistor Configuration Dual
	Height 1.05mm
	Width 5.1 mm
	Length 6.1mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet NVMFD6H840NLT1G

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low RDS(on)

Minimize Conduction Losses

Low QG and Capacitance

Minimize Driver Losses

NVMFS5C410NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Application

Reverser Battery protection

Switching power supplies

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLT1G

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