onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN
- RS 재고 번호:
- 195-2668
- 제조 부품 번호:
- NVMFD6H840NLT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1500 units)*
₩2,915,880.00
마지막 RS 재고
- 최종적인 1,500 개 unit(s)이 배송 준비 됨
단위당 | 한팩당 | 릴당* |
|---|---|---|
| 1500 - 1500 | ₩1,943.92 | ₩2,915,316.00 |
| 3000 - 4500 | ₩1,904.44 | ₩2,857,224.00 |
| 6000 + | ₩1,866.84 | ₩2,799,978.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 재고 번호:
- 195-2668
- 제조 부품 번호:
- NVMFD6H840NLT1G
- 제조업체:
- onsemi
사양
기술적 참조
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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