STMicroelectronics Single Mdmesh M6 1 Type N, Type N-Channel, 13 A, 600 V Enhancement, 3-Pin TO-220FP STF18N60M6
- RS 제품 번호:
- 192-5002P
- 제조사 부품 번호:
- STF18N60M6
- 제조업체:
- STMicroelectronics
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- RS 제품 번호:
- 192-5002P
- 제조사 부품 번호:
- STF18N60M6
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | Mdmesh M6 | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series Mdmesh M6 | ||
Package Type TO-220FP | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 10.4mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected