STMicroelectronics Single 1 N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2

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포장 옵션
RS 제품 번호:
192-4952
제조사 부품 번호:
STP26N65DM2
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Transistor Configuration

Single

Number of Elements per Chip

1

Channel Type

N

Maximum Continuous Drain Current (Id)

25 A

Maximum Drain Source Voltage (Vds)

650 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-220

Automotive Standard

No

Forward Voltage (Vf)

1.6 V

Height

15.75 mm

Length

10.4 mm

Maximum Drain Source Resistance (Rds)

190 Ω

Maximum Gate Source Voltage (Vgs)

25 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

160 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface, Through Hole, Through Hole

Standards/Approvals

FCC Part 68, RoHS, TIA-1096-A

Typical Gate Charge (Qg) @ Vgs

35.5 nC

Width

4.6 mm

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and Ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

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