STMicroelectronics Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩248,160.00

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Per Tube*
50 - 50₩4,963.20₩248,197.60
100 - 100₩4,814.68₩240,734.00
150 +₩4,669.92₩233,514.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
261-4759
제조사 부품 번호:
STP65N150M9
제조업체:
STMicroelectronics
제품 정보를 선택해 유사 제품을 찾기
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브랜드

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

4.6mm

Width

10.4 mm

Standards/Approvals

No

Length

28.9mm

Automotive Standard

No

COO (Country of Origin):
CN

N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package


This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

All features


  • Worldwide best FOM RDS(on)*Qg among silicon-based devices

  • Higher VDSS rating

  • Higher dv/dt capability

  • Excellent switching performance

  • Easy to drive

  • 100% avalanche tested

  • Zener-protected

    • 관련된 링크들