제조사부품번호

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

RS 제품 번호:: 192-4882P
제조사 부품 번호:: STL26N60DM6
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal 750 units (supplied on a reel)*

₩5,301,000.00

165 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
750 - 1495	₩7,068.00
1500 +	₩6,964.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 192-4882P
제조사 부품 번호:: STL26N60DM6
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerFLAT
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	215mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Maximum Power Dissipation Pd	110W
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Standards/Approvals	No
	Length	8.1mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerFLAT
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 215mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Maximum Power Dissipation Pd 110W
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Standards/Approvals No
	Length 8.1mm
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

대량 구매 가격 책정 옵션

관련된 링크들