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onsemi NTHL N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 189-0461P
제조사 부품 번호:: NTHL190N65S3HF
제조업체:: onsemi

onsemi NTHL N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal 10 units (supplied in a tube)*

₩116,680.00

일시적 품절

2027년 3월 29일 부터 배송

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수량	한팩당
10 - 10	₩11,668.00
15 +	₩11,484.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 189-0461P
제조사 부품 번호:: NTHL190N65S3HF
제조업체:: onsemi

참조 문서

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	162W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	15.87mm
	Height	20.82mm
	Width	4.82mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 162W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 15.87mm
	Height 20.82mm
	Width 4.82mm
	Standards/Approvals No
	Automotive Standard No

Datasheet NTHL190N65S3HF

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

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