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STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263 STB12NM50T4

RS 제품 번호:: 188-8473
제조사 부품 번호:: STB12NM50T4
제조업체:: STMicroelectronics

STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263 STB12NM50T4

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩34,855.20

재고있음

975 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 245	₩6,971.04	₩34,855.20
250 - 495	₩6,794.32	₩33,971.60
500 +	₩6,689.04	₩33,445.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-8473
제조사 부품 번호:: STB12NM50T4
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	500V
	Series	STP12NM50
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	350mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	160W
	Minimum Operating Temperature	-65°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	9.35 mm
	Height	4.37mm
	Length	10.4mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 500V
	Series STP12NM50
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 350mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 160W
	Minimum Operating Temperature -65°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 9.35 mm
	Height 4.37mm
	Length 10.4mm
	Automotive Standard No

Datasheet STB12NM50T4

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.

High dv/dt and avalanche capabilities

Low input capacitance and gate charge

Tight process control and high manufacturing yields

Low gate input resistance

Applications

Switching application

STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263 STB12NM50T4

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