STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 188-8281
- 제조사 부품 번호:
- STB12NM50T4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩3,246,750.00
일시적 품절
- 2026년 9월 18일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 4000 | ₩3,246.75 | ₩3,247,530.00 |
| 5000 + | ₩2,923.05 | ₩2,922,855.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-8281
- 제조사 부품 번호:
- STB12NM50T4
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | STP12NM50 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.37mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series STP12NM50 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.37mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application
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