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STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4

RS 제품 번호:: 188-8461
제조사 부품 번호:: STB11NM80T4
제조업체:: STMicroelectronics

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩23,105.20

일시적 품절

2026년 4월 28일 부터 배송

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수량	한팩당	한팩당*
2 - 248	₩11,552.60	₩23,105.20
250 - 498	₩11,261.20	₩22,522.40
500 +	₩11,082.60	₩22,165.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-8461
제조사 부품 번호:: STB11NM80T4
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MDmesh Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-263
	Series	STB11NM80
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.4Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	150W
	Forward Voltage Vf	0.86V
	Typical Gate Charge Qg @ Vgs	43.6nC
	Minimum Operating Temperature	-65°C
	Maximum Operating Temperature	150°C
	Width	9.35 mm
	Standards/Approvals	No
	Height	4.37mm
	Length	10.4mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MDmesh Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-263
	Series STB11NM80
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.4Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 150W
	Forward Voltage Vf 0.86V
	Typical Gate Charge Qg @ Vgs 43.6nC
	Minimum Operating Temperature -65°C
	Maximum Operating Temperature 150°C
	Width 9.35 mm
	Standards/Approvals No
	Height 4.37mm
	Length 10.4mm
	Automotive Standard No

Datasheet STB11NM80T4

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Low input capacitance and gate charge

Low gate input resistance

Best RDS(on)Qg in the industry

Applications

Switching applications

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4

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