제조사부품번호

STMicroelectronics Type N-Channel MOSFET, 7 A, 710 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 188-8291
제조사 부품 번호:: STD8N65M5
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 7 A, 710 V Enhancement, 3-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩5,828,000.00

일시적 품절

2026년 4월 28일 부터 배송

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수량	한팩당	릴당*
2500 - 2500	₩2,331.20	₩5,829,410.00
5000 - 22500	₩2,286.08	₩5,712,850.00
25000 +	₩2,239.08	₩5,598,640.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-8291
제조사 부품 번호:: STD8N65M5
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	710V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.5V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	70W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.6mm
	Height	2.17mm
	Width	6.2 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 710V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.5V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 70W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.6mm
	Height 2.17mm
	Width 6.2 mm
	Automotive Standard No

Datasheet STD8N65M5

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Worldwide best RDS(on) area

Higher VDSSrating

High dv/dt capability

Excellent switching performance

Easy to drive

Applications

Switching applications

STMicroelectronics Type N-Channel MOSFET, 7 A, 710 V Enhancement, 3-Pin TO-252

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