제조사부품번호

onsemi N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 186-1441P
제조사 부품 번호:: NTPF110N65S3HF
제조업체:: onsemi

onsemi N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220

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RS 제품 번호:: 186-1441P
제조사 부품 번호:: NTPF110N65S3HF
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	240W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	62nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	16.12mm
	Length	10.63mm
	Standards/Approvals	No
	Width	4.9mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 240W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 62nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 16.12mm
	Length 10.63mm
	Standards/Approvals No
	Width 4.9mm
	Automotive Standard No

Datasheet NTPF110N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 62 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)

Optimized Capacitance

Excellent body diode performance (low Qrr, robust body diode)

Typ. RDS(on) = 98 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220

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