onsemi NVMFS5H663NL N-Channel MOSFET, 67 A, 60 V Enhancement, 5-Pin DFN
- RS 제품 번호:
- 185-9275P
- 제조사 부품 번호:
- NVMFS5H663NLT1G
- 제조업체:
- onsemi
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- RS 제품 번호:
- 185-9275P
- 제조사 부품 번호:
- NVMFS5H663NLT1G
- 제조업체:
- onsemi
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFS5H663NL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 63W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 6.1mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFS5H663NL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 63W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 6.1mm | ||
Automotive Standard AEC-Q101 | ||
비준수
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
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