onsemi NVMFS5H663NL Type N-Channel MOSFET, 67 A, 60 V Enhancement, 5-Pin DFN NVMFS5H663NLT1G
- RS 제품 번호:
- 185-9275
- 제조사 부품 번호:
- NVMFS5H663NLT1G
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 8 units)*
₩10,452.80
마지막 RS 재고
- 최종적인 2,952 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 8 - 368 | ₩1,306.60 | ₩10,452.80 |
| 376 - 744 | ₩1,274.64 | ₩10,189.60 |
| 752 + | ₩1,255.84 | ₩10,039.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 185-9275
- 제조사 부품 번호:
- NVMFS5H663NLT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFS5H663NL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFS5H663NL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
비준수
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
관련된 링크들
- onsemi NVMFS5H663NL Type N-Channel MOSFET, 67 A, 60 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C406NL Type N-Channel MOSFET, 362 A, 40 V Enhancement, 5-Pin DFN NVMFS5C406NLT1G
- onsemi NVMFS5C638NL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 5-Pin DFN NVMFS5C638NLT1G
- onsemi NVMFS5C680NL Type N-Channel MOSFET, 21 A, 60 V Enhancement, 5-Pin DFN NVMFS5C680NLT1G
- onsemi NVMFS5C426NL Type N-Channel MOSFET, 237 A, 40 V Enhancement, 5-Pin DFN NVMFS5C426NLT1G
- onsemi NVMFS5C406NL Type N-Channel MOSFET, 362 A, 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C426NL Type N-Channel MOSFET, 237 A, 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C638NL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 5-Pin DFN