onsemi NVMFS5H663NL Type N-Channel MOSFET, 67 A, 60 V Enhancement, 5-Pin DFN
- RS 제품 번호:
- 185-8153
- 제조사 부품 번호:
- NVMFS5H663NLT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1500 units)*
₩1,221,060.00
마지막 RS 재고
- 최종적인 1,500 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1500 - 1500 | ₩814.04 | ₩1,220,496.00 |
| 3000 - 4500 | ₩797.12 | ₩1,196,244.00 |
| 6000 + | ₩782.08 | ₩1,172,274.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 185-8153
- 제조사 부품 번호:
- NVMFS5H663NLT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5H663NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5H663NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
비준수
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
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