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onsemi FCMT N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN

Name: onsemi FCMT N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN
Brand: onsemi
SKU: 185-9219P
Availability: OutOfStock

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사양

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PQFN
	Series	FCMT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	49nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	181W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	8mm
	Height	1.05mm
	Standards/Approvals	No
	Width	8mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type PQFN
	Series FCMT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 49nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 181W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 8mm
	Height 1.05mm
	Standards/Approvals No
	Width 8mm
	Automotive Standard No

비준수

700 V @ TJ = 150 oC

Leadless Ultra-thin SMD package

Kelvin contact

Ultra Low Gate Charge (Typ. Qg = 49 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)

Optimized Capacitance

Typ. RDS(on) = 100 mΩ

Internal Gate Resistance: 0.5 Ω

Higher system reliability at low temperature operation

High power density

Low gate noise and switching loss

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

LED Lighting

Adapter

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