ROHM R6047ENZ4 N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-247 R6047ENZ4C13
- RS 제품 번호:
- 183-5331
- 제조사 부품 번호:
- R6047ENZ4C13
- 제조업체:
- ROHM
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩13,348.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩13,348.00 |
| 5 - 9 | ₩13,103.60 |
| 10 - 49 | ₩12,859.20 |
| 50 + | ₩12,596.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 183-5331
- 제조사 부품 번호:
- R6047ENZ4C13
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Series | R6047ENZ4 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 481 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 5.22mm | |
| Length | 16.24mm | |
| Typical Gate Charge @ Vgs | 145 nC @ 10 V | |
| Maximum Operating Temperature | 150 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.25mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Series R6047ENZ4 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 481 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 5.22mm | ||
Length 16.24mm | ||
Typical Gate Charge @ Vgs 145 nC @ 10 V | ||
Maximum Operating Temperature 150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 21.25mm | ||
- COO (Country of Origin):
- TH
R6047ENZ4 is a power MOSFET for switching applications.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
Fast switching speed
Parallel use is easy
Pb-free plating
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