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onsemi FDPF N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 181-1917P
제조사 부품 번호:: FDPF4D5N10C
제조업체:: onsemi

onsemi FDPF N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal 250 units (supplied in a tube)*

₩2,637,500.00

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562 개 단위 배송 준비 완료

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250 - 498	₩10,550.00
500 +	₩10,390.00

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RS 제품 번호:: 181-1917P
제조사 부품 번호:: FDPF4D5N10C
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	128A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	FDPF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	37.5W
	Typical Gate Charge Qg @ Vgs	48nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.9mm
	Standards/Approvals	No
	Length	10.36mm
	Height	16.07mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 128A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series FDPF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 37.5W
	Typical Gate Charge Qg @ Vgs 48nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.9mm
	Standards/Approvals No
	Length 10.36mm
	Height 16.07mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A

Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 48nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

Solar Inverter

onsemi FDPF N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220

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