Vishay Single 1 N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IRLR110PBF
- RS 제품 번호:
- 180-8833
- 제조사 부품 번호:
- IRLR110PBF
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
₩15,360.00
제한된 재고
- 추가로 2026년 10월 05일 부터 40 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,536.00 | ₩15,360.00 |
| 20 - 30 | ₩1,496.00 | ₩14,960.00 |
| 40 + | ₩1,474.00 | ₩14,740.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8833
- 제조사 부품 번호:
- IRLR110PBF
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.54Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Power Dissipation Pd | 25W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.65mm | |
| Width | 6.73mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.54Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Power Dissipation Pd 25W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 9.65mm | ||
Width 6.73mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-252-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 10V. It has a drain-source resistance of 540mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 25W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Available in tape and reel
• Dynamic dV/dt rating
• Halogen and lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 150°C
• RDS (on) specified at VGS is 4V and 5V
• Repetitive avalanche rated
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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