Vishay Single 1 N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IRLR110PBF

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RS 제품 번호:
180-8363
제조사 부품 번호:
IRLR110PBF
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

100V

Mount Type

Surface, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.54Ω

Maximum Power Dissipation Pd

25W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.1nC

Maximum Gate Source Voltage Vgs

10V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Length

9.65mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Width

6.73mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-252-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 10V. It has a drain-source resistance of 540mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 25W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Available in tape and reel

• Dynamic dV/dt rating

• Halogen and lead (Pb) free component

• Logic-level gate drive

• Operating temperature ranges between -55°C and 150°C

• RDS (on) specified at VGS is 4V and 5V

• Repetitive avalanche rated

Applications


• Battery chargers

• Inverters

• Power supplies

• Switching mode power supply (SMPS)

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