Vishay Single 1 Type N-Channel MOSFET, 5.5 A, 400 V
- RS 제품 번호:
- 180-8631
- 제조사 부품 번호:
- IRF730ASPBF
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩15,998.80
재고있음
- 100 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩3,199.76 | ₩15,998.80 |
| 15 - 20 | ₩3,120.80 | ₩15,604.00 |
| 25 + | ₩3,071.92 | ₩15,359.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8631
- 제조사 부품 번호:
- IRF730ASPBF
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 74W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 4.83mm | |
| Width | 10.67 mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Length | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 400V | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 74W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 4.83mm | ||
Width 10.67 mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Length 9.65mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 400V and maximum gate-source voltage of 30V. It has a drain-source resistance of 10mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Halogen and lead (Pb) free component
• Improved gate, avalanche and dynamic dV/dt
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
관련된 링크들
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