Vishay Single N-Channel Power MOSFET, 5.2 A, 200 V TO-220AB IRL620PBF
- RS 제품 번호:
- 180-8360
- 제조사 부품 번호:
- IRL620PBF
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩141,400.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩2,828.00 | ₩141,360.00 |
| 100 - 150 | ₩2,766.00 | ₩138,280.00 |
| 200 + | ₩2,704.00 | ₩135,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8360
- 제조사 부품 번호:
- IRL620PBF
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Width | 10.52mm | |
| Height | 6.48mm | |
| Length | 14.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Width 10.52mm | ||
Height 6.48mm | ||
Length 14.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRL620 is a N-channel power MOSFET having drain to source(Vds) voltage of 200V.The gate to source voltage(VGS) is 10V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.8ohms at 5VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
Logic level gate drive
관련된 링크들
- Vishay Single N-Channel Power MOSFET, 5.2 A, 200 V TO-220AB IRL620PBF
- Vishay IRL N-Channel Power MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-220AB IRL530PBF
- Infineon Single LogicFET 1 N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF
- Vishay N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB IRL540PBF
- Infineon LogicFET N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF
- Infineon LogicFET N-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-220AB IRL3803PBF
- Vishay IRL N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-220 IRL630PBF
- Vishay IRF620 N-Channel Power MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220AB IRF620PBF