Vishay N-Channel N-Channel Mosfet, 90 A, 200 V, 3-Pin TO-263 SUM90140E-GE3
- RS 제품 번호:
- 180-8081
- 제조사 부품 번호:
- SUM90140E-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩26,113.20
마지막 RS 재고
- 최종적인 2,050 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 195 | ₩5,222.64 | ₩26,113.20 |
| 200 - 395 | ₩5,091.04 | ₩25,455.20 |
| 400 + | ₩5,012.08 | ₩25,060.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8081
- 제조사 부품 번호:
- SUM90140E-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | N-Channel Mosfet | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.017Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | N-Channel | |
| Standards/Approvals | RoHS | |
| Width | 10.414 mm | |
| Length | 15.875mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type N-Channel Mosfet | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.017Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration N-Channel | ||
Standards/Approvals RoHS | ||
Width 10.414 mm | ||
Length 15.875mm | ||
Automotive Standard No | ||
The Vishay SUM90140E is a N-channel 175°C maximum junction temperature MOSFET having drain to source voltage(Vds) of 200V and gate to source voltage (VGS) 20V. It is having D2PAK (TO-263) package. It is offers drain to source resistance (RDS.) of 0.017ohms at 10VGS and 0.018ohms at 7.5VGS. Maximum drain current 90A.
Thunder FET power MOSFET
Maximum 175°C junction temperature
100 % Rg and UIS tested
관련된 링크들
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