Vishay N-Channel 100 V Type N-Channel MOSFET, 150 A, 100 V, 3-Pin TO-263 SUM70042E-GE3
- RS 제품 번호:
- 225-9970
- 제조사 부품 번호:
- SUM70042E-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩29,406.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 20 | ₩5,881.20 | ₩29,406.00 |
| 25 - 45 | ₩5,701.80 | ₩28,509.00 |
| 50 - 95 | ₩5,538.00 | ₩27,690.00 |
| 100 - 245 | ₩5,366.40 | ₩26,832.00 |
| 250 + | ₩5,206.50 | ₩26,032.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 225-9970
- 제조사 부품 번호:
- SUM70042E-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | N-Channel 100 V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.875mm | |
| Standards/Approvals | No | |
| Height | 4.826mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series N-Channel 100 V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 175°C | ||
Length 15.875mm | ||
Standards/Approvals No | ||
Height 4.826mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through V(plateau)
100 % Rg and UIS tested
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