제조사부품번호

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

RS 제품 번호:: 180-7879
제조사 부품 번호:: SI1034CX-T1-GE3
제조업체:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 50 units)*

₩16,638.00

재고있음

추가로 2025년 12월 29일 부터 8,900 개 단위 배송

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수량	한팩당	한팩당*
50 - 700	₩332.76	₩16,619.20
750 - 1450	₩323.36	₩16,205.60
1500 +	₩319.60	₩15,942.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7879
제조사 부품 번호:: SI1034CX-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	0.5A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-89
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.396Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.3nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	220mW
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Length	1.7mm
	Height	0.6mm
	Width	1.2 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 0.5A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-89
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.396Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.3nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 220mW
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Length 1.7mm
	Height 0.6mm
	Width 1.2 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery powered devices

• Drivers: relays, solenoids, lamps, hammers, displays, memories

• Load/power switching for portable devices

• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

Vishay MOSFET

Features and Benefits

Applications

Certifications

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