제조사부품번호

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

RS 제품 번호:: 180-8014
제조사 부품 번호:: SI4204DY-T1-GE3
제조업체:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩12,332.80

일시적 품절

2026년 8월 24일 부터 배송

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수량	한팩당	한팩당*
5 - 620	₩2,466.56	₩12,332.80
625 - 1245	₩2,406.40	₩12,032.00
1250 +	₩2,365.04	₩11,825.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-8014
제조사 부품 번호:: SI4204DY-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19.8A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.006Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3.25W
	Typical Gate Charge Qg @ Vgs	30nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	3.05mm
	Width	1.65 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19.8A
	Maximum Drain Source Voltage Vds 20V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.006Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3.25W
	Typical Gate Charge Qg @ Vgs 30nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 3.05mm
	Width 1.65 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC Converter

• Fixed Telecommunication

• Notebook PC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

Vishay MOSFET

Features and Benefits

Applications

Certifications

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