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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

RS 제품 번호:: 787-9055
제조사 부품 번호:: SI1029X-T1-GE3
제조업체:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

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RS 제품 번호:: 787-9055
제조사 부품 번호:: SI1029X-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-89-6
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	750nC
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.4V
	Maximum Power Dissipation Pd	250mW
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Width	1.7mm
	Standards/Approvals	No
	Length	1.7mm
	Height	600μm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-89-6
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 750nC
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.4V
	Maximum Power Dissipation Pd 250mW
	Minimum Operating Temperature -55°C
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Width 1.7mm
	Standards/Approvals No
	Length 1.7mm
	Height 600μm
	Number of Elements per Chip 2
	Automotive Standard No

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

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