제조사부품번호

Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

RS 제품 번호:: 180-7827
제조사 부품 번호:: SIA817EDJ-T1-GE3
제조업체:: Vishay

Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩12,784.00

일시적 품절

2026년 6월 08일 부터 배송

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수량	한팩당	한팩당*
25 - 725	₩511.36	₩12,765.20
750 - 1475	₩498.20	₩12,445.60
1500 +	₩490.68	₩12,257.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7827
제조사 부품 번호:: SIA817EDJ-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK SC-70-6L
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.065Ω
	Typical Gate Charge Qg @ Vgs	6.6nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	6.5W
	Forward Voltage Vf	0.56V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual Plus Integrated Schottky
	Standards/Approvals	No
	Width	2.05 mm
	Height	0.75mm
	Length	2.05mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK SC-70-6L
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.065Ω
	Typical Gate Charge Qg @ Vgs 6.6nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 6.5W
	Forward Voltage Vf 0.56V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual Plus Integrated Schottky
	Standards/Approvals No
	Width 2.05 mm
	Height 0.75mm
	Length 2.05mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.

Little foot plus Schottky power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile

Typical ESD protection (MOSFET): 1500 V (HBM)

Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

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